Abstract: A biasing method for a stacked field-effect transistor (FET)-based radio-frequency (RF) switch is proposed. The advantage of the method over conventional passive resistive biasing is the ...

An SCR topology transmogrifies into BJT two-wire precision current source with a self-resetting fault-current limiter.

GE Aerospace has announced its fourth generation of SiC power MOSFETs chips at the company’s research centre in Niskayuna, New York. Available in a 5mm x 5 mm chip size, this latest generation of SiC ...

The FET token’s price fell by over 93% since the merger of the Artificial Superintelligence Alliance, a drop that is unrelated to Ocean Protocol’s actions, according to its founder. Update Oct. 24, ...

Thinking about learning Python? It’s a pretty popular language these days, and for good reason. It’s not super complicated, which is nice if you’re just starting out. We’ve put together a guide that ...

Community driven content discussing all aspects of software development from DevOps to design patterns. Git isn’t hard to learn. Moreover, with a Git GUI such as Atlassian’s Sourcetree, and a SaaS ...

Want to correct errors or update content in a PDF? Whether you prefer a powerful, corporate-friendly solution or a basic app you can use at no cost, we're here to help you find the best PDF software ...

Abstract: The equations typically taught and used to estimate the threshold voltage for MOSFETs, based on the band bending in the MOSFET channel, are simple and easy to develop. However, they work ...

Innovation in the world of power electronics comes from many sources, including new materials, more advanced power-supply topologies, optimized passive components, packaging, and cooling technologies.

Automotive-qualified 40-V MOSFETs improve the efficiency and ruggedness for motor drives and DC-DC converters throughout the vehicle, as well as for cordless appliances and tools. ST’s STripFET F8 ...

Renesas 100-V N-channel MOSFETs leverage an improved wafer manufacturing process with split gate technology, reducing on-resistance (R DS(on)) by 30%. The REXFET-1 process also cuts total gate charge ...