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Next-generation memory: Tungsten-based SOT-MRAM achieves nanosecond switching and low-power data storage
The ability to reliably switch the direction of magnetic alignment in materials, a process known as magnetization switching, is known to be central to the functioning of most memory devices. One known ...
A new technical paper titled “SOT-MRAM Bitcell Scaling with BEOL Read Selectors: A DTCO Study” was published by researchers at imec, Leuven, and 3001 Belgium. “This work explores the cross-node ...
A new technical paper titled “Comprehensive device to system co-design for SOT-MRAM at the 7nm node” was published by researchers at Georgia Institute of Technology and Intel. “This work presents a ...
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