BOSTON--(BUSINESS WIRE)--The recently released Strategy Analytics GaAs and Compound Semiconductor Technologies Service (GaAs) Data Model, “Cellular Infrastructure Component Demand,” forecasts that ...

Ampleon has released the BLP05H9S500P LDMOS-based power amplifier transistor designed for use in industrial heating, defrosting, plasma lighting and medical applications. Operating at a frequency ...

The first step in designing a microwave frequency power amplifier monolithic microwave integrated circuit on a given GaN foundry process is to select the transistor size and bias, writes Liam Devlin.

Researchers from the University of California – Riverside and Rice University have made the first single-transistor amplifier from graphene. The device is better than conventional amplifiers thanks to ...

A new generation of high-voltage gallium arsenide power amplifier transistors is designed to substantially boost the efficiency of 3G cellular base stations, reducing energy costs while allowing ...

GaN power transistors have been quickly gaining momentum in the power and high frequency application space and not just overtaking Silicon in power and RF, but also GaAs in the microwave arena. If you ...

Communication satellites and flying antenna platforms can contribute to the comprehensive and resilient operation of global mobile networks of the fifth and sixth generation (5G, 6G). However, as ...

Designed specifically for use in high power amplifiers operating in the 10 to 500MHz, the device is suitable for a variety of broadcast and industrial applications, including plasma generators, ...

It used to be a rite of passage to be able to do the math necessary to design various bipolar transistor amplifier ...

The voltage-amplifier stage (or VAS) has often been regarded as the most critical part of a power-amplifier, since it not only provides all the voltage gain but also must deliver the full output ...