Compared with the industry-standard 60-V MOSFET, the device offers a higher breakdown voltage of 100 V and�with an on-resistance of 0.72 W �about five times the continuous current. The device is ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched a gate driver photocoupler, “TLP5814H,” with an output of +6.8A/-4.8A, in a small size SO8L ...
The performance potential of SiC is indisputable. The key challenge to be mastered is to determine which design approach achieves the biggest success in applications. Advanced design activities are ...
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