Full-blown process excursions that affect every wafer are comparatively easy for fabs to detect and fix. However, “onesie-twosie,” lower-volume excursions can go unresolved for months or even years.

Understanding how dislocations (line defects in the crystal structure) occur when 3D-printing metals has been unclear to materials scientists. Understanding when and how dislocations form in ...

Systematic yield issues are supplanting random defects as the dominant concern in semiconductor manufacturing at the most advanced process nodes, requiring more time, effort, and cost to achieve ...