Helios will be leveraging Galaxy's Hyperdrive platform to provide epitaxy tool owners with unprecedented data insights and tool optimization capabilities. Together, we are empowering semiconductor ...

Remote epitaxy has been gaining attention in the field of semiconductor manufacturing for growing thin films that copy the crystal structure of the template, which can later be exfoliated to form ...

(a) Schematic illustration of epitaxy process. (b) Photographs of 4-inch MoS2 wafers: monolayer (i), bilayer (ii), trilayer (iii). (c) Cross-sectional HAADF-STEM images of epitaxial mono-, bi- and ...

Researchers grow single-crystal GaN films on amorphous glass using a chemically converted molybdenum nitride buffer, removing the need for crystalline substrates in epitaxy (Nanowerk Spotlight) The ...

Gallium nitride (GaN) has emerged as a key semiconductor in the evolution of power electronics thanks to its wide bandgap, high critical electric field and superior carrier mobility. Recent advances ...

Molecular beam epitaxy (MBE) is a precision epitaxial growth technique that permits atomic‐scale tailoring of semiconductor structures. By directing beams of elemental or compound sources onto heated ...

NexWafe’s high-throughput epitaxy tool, ProCon 2.5. Image: NexWafe German solar wafer manufacturer NexWafe has announced “key milestones” in its epitaxial wafer production which it claims can reshape ...

Over on ScienceDaily we learn that an international team of scientists have turned a common semiconductor germanium into a superconductor. Researchers have been able to make the semiconductor ...

Researchers from Huazhong University of Science and Technology and Hebei University have optimized the nucleation process by regulating the interactions between the epitaxial layer and the substrate.

Remote epitaxy, a promising technology for thin film growth and exfoliation, suffers from substrate damage under harsh conditions. In this regard, researchers recently investigated the effect of ...